Journals & Conferences - 2021

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Journals

  • Zichao Ma, Lining Zhang, Changjian Zhou, Mansun Chan, "High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact", IEEE Electron Device Letters, Vol. 42, No. 3, pp. 343-346, 2021.
  • Yanmei Xue, Xiaodong Yang, Changjian Zhou, Xiu Yin Zhang, Mansun Chan, "High Q Lateral-Field-Excited Bulk Resonator Based on Single-Crystal LiTaO₃ for 5G Wireless Communication", IEEE Journal of the Electron Devices Society, Vol. 9, pp. 353-358, 2021
  • C. J. Estrada, Z. Ma and M. Chan, "Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack," in IEEE Electron Device Letters, vol. 42, no. 12, pp. 1890-1893, Dec. 2021, doi: 10.1109/LED.2021.3124823.

  • C. Prawoto, Z. Ma, Y. Xiao, S. Raju and M. Chan, "Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction," in IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 5078-5084, Oct. 2021, doi: 10.1109/TED.2021.3105086.

  • C. J. Estrada, Z. Ma and M. Chan, "Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack," in IEEE Electron Device Letters, vol. 42, no. 12, pp. 1890-1893, Dec. 2021, doi: 10.1109/LED.2021.3124823.

  • C. Prawoto, Z. Ma, Y. Xiao, S. Raju and M. Chan, "Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction," in IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 5078-5084, Oct. 2021, doi: 10.1109/TED.2021.3105086

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Conference

  • C. J. Estrada, Z. Ma and M. Chan, "Complementary Two-Dimensional (2-D) MoS2 FET Technology," ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, pp. 219-222, doi: 10.1109/ESSDERC53440.2021.9631795.
  • C. Prawoto, Z. Ma, Y. Xiao, S. Raju, C. Zhou, M. Chan, ”Low-Loss RF Passive Elements by Top-Metal Air-Gap Technology,” 6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022, March 6-9, 2022, Oita, Japan (Accepted).
  • C. J. Estrada, Z. Ma and M. Chan, "Complementary Two-Dimensional (2-D) MoS2 FET Technology," ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, pp. 219-222, doi: 10.1109/ESSDERC53440.2021.9631795.

  • C. Prawoto, Z. Ma, Y. Xiao, S. Raju, C. Zhou, M. Chan, ”Low-Loss RF Passive Elements by Top-Metal Air-Gap Technology,” 6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022, March 6-9, 2022, Oita, Japan (Accepted).